Evaluation of LDD MOSFET's based on hot-electron-induced degradation
- 1 May 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (5) , 162-165
- https://doi.org/10.1109/EDL.1984.25870
Abstract
Hot-electron-induced device degradation in LDD MOSFET's is thoroughly studied. Conventional ways to characterize device degradation, i.e., threshold shift and transconductance reduction, are not suitable for LDD MOSFET's due to the nature of degradation in such devices. Using a current-drive degradation criterion, it is shown that LDD MOSFET's have little net advantage over conventional MOSFET's in terms of hot-electron-induced long-term degradation.Keywords
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