A low-frequency GaAs MESFET circuit model
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 23 (2) , 605-608
- https://doi.org/10.1109/4.1029
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- RF Nonlinear Device Characterization Yields Improved Modeling AccuracyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuitsIEEE Transactions on Electron Devices, 1985
- A MESFET Model for Use in the Design of GaAs Integrated CircuitsIEEE Transactions on Microwave Theory and Techniques, 1980
- High-frequency network properties of MOS transistors including the substrate resistivity effectsIEEE Transactions on Electron Devices, 1969