Hydrogen in semiconductors: The roles of μSR and theory
- 1 December 1994
- journal article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 86 (1) , 625-637
- https://doi.org/10.1007/bf02068957
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Similarities, differences, and trends in the properties of interstitial H in cubic C, Si, BN, BP, AlP, and SiCPhysical Review B, 1990
- Interstitial O in Si and its interactions with HPhysical Review B, 1990
- Semiempirical electronic-structure calculations of the hydrogen-phosphorus pair in siliconPhysical Review B, 1990
- Hydrogen passivation of shallow acceptors and donors inc-Si: Comparisons and trendsPhysical Review B, 1989
- Structure of acceptor-hydrogen and donor-hydrogen complexes in silicon from uniaxial stress studiesPhysical Review B, 1988
- Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitationsPhysical Review B, 1988
- Donor-hydrogen complexes in passivated siliconPhysical Review B, 1988
- Defects in single-crystal silicon induced by hydrogenationPhysical Review B, 1987
- Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequencyPhysical Review B, 1985
- Hydrogen passivation of gold-related deep levels in siliconPhysical Review B, 1982