Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- 1 January 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (1R) , 195-197
- https://doi.org/10.1143/jjap.38.195
Abstract
An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GaInAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III–V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact.Keywords
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