Demonstration of direct bonding between InP andgadolinium gallium garnet (Gd 3 Ga 5 O 12 ) substrates
- 1 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (18) , 1534-1536
- https://doi.org/10.1049/el:19941031
Abstract
The authors demonstrate the direct bonding of InP/Gd3Ga5O12 (GGG) and InP/GaInSb on GGG without glue. After chemical treatment, heat treatment was applied in an H2 atmosphere without a weight. This technique makes feasible the integration of semiconductor and magneto-optic devices.Keywords
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