Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

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Abstract
GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.