Dielectrics for passivation of planar InP/InGaAs diodes
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 76-82
- https://doi.org/10.1016/0169-4332(87)90076-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- First life-test results on planar p-i-n InGaAs/InP photodiodes passivated with SiO2or SiNx+SiO2or SiNxlayersIEEE Electron Device Letters, 1985
- Planar InP/GaInAsP/GaInAs buried-structure avalanche photodiodeApplied Physics Letters, 1984
- Preparation and Properties of the Anodic Al2 O 3 Film on InP and In0.53Ga0.47 ASJournal of the Electrochemical Society, 1983
- Ion implantation of Be in In0.53Ga0.47AsApplied Physics Letters, 1982