Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves
- 16 March 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 100 (1) , 95-104
- https://doi.org/10.1002/pssa.2211000110
Abstract
No abstract availableKeywords
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