Rutherford backscattering analysis of silicide formation in MoSi structures by ion implantation
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 567-572
- https://doi.org/10.1016/0167-5087(83)91044-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The redistribution of implanted dopants after metal-silicide formationJournal of Applied Physics, 1978
- Migration of Mo atoms across Mo–Si interface induced by Ar+ ion bombardmentApplied Physics Letters, 1974