A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistorsIEEE Transactions on Electron Devices, 1995
- The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)Solid-State Electronics, 1994
- 500-V n-channel insulated-gate bipolar transistor with a trench gate structureIEEE Transactions on Electron Devices, 1989
- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988
- A simplified theory of the p-i-n diodeSolid-State Electronics, 1977
- The forward characteristic of silicon power rectifiers at high current densitiesSolid-State Electronics, 1968