Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors

This publication has 13 references indexed in Scilit:

• The 3rd generation IGBT toward a limitation of IGBT performance
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• The inversion layer emitter thyristor - a novel power device concept
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)
  Solid-State Electronics, 1994
• Mobility study on RIE etched silicon surfaces using SF/sub 6//O/sub 2/ gas etchants
  IEEE Transactions on Electron Devices, 1993
• Optimized trench MOSFET technologies for power devices
  IEEE Transactions on Electron Devices, 1992
• Trench DMOS transistor technology for high-current (100 A range) switching
  Solid-State Electronics, 1991
• High voltage power MOSFETs with a trench-gate structure
  Solid-State Electronics, 1990
• 500-V n-channel insulated-gate bipolar transistor with a trench gate structure
  IEEE Transactions on Electron Devices, 1989
• An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
  Solid-State Electronics, 1988
• Numerical comparison of DMOS, VMOS, and UMOS power transistors
  IEEE Transactions on Electron Devices, 1983