The inversion layer emitter thyristor - a novel power device concept
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)Solid-State Electronics, 1994
- The MOS-gated emitter switched thyristorIEEE Electron Device Letters, 1990
- 500-V n-channel insulated-gate bipolar transistor with a trench gate structureIEEE Transactions on Electron Devices, 1989
- A new vertical power MOSFET structure with extremely reduced on-resistanceIEEE Transactions on Electron Devices, 1985