cw monolithic acoustic surface wave amplifier incorporated in a Δv/v waveguide

Abstract
Room‐temperature cw operation is reported for an acoustic surface wave amplifier which uses a 25‐μm‐wide thin film of InSb deposited on LiNbO3. The device also illustrates the use of a thin semiconductor or metal film as a waveguiding structure which exhibits very little dispersion. A cw gain of 23 dB was observed at 340 MHz with a group delay factor (1/τ)∂τ/∂f = −8.3 × 10−7 MHz−1.

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