Influence of Mn doping conditions on electroluminescent characteristics of ZnS:Mn thin-film electroluminescent (TFEL) devices using insulating ceramic
- 2 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 1021-1025
- https://doi.org/10.1016/0022-0248(92)90905-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Crystallinity of emitting layer andelectroluminescence characteristics in multicolour ZnS Thin film electroluminescent device with a thick dielectric ceramic insulating layerThin Solid Films, 1990
- Low Voltage Driven MOCVD-Grown ZnS:Mn Thin-Film Electroluminescent Devices Using Insulating BaTiO3 Ceramic SheetsJapanese Journal of Applied Physics, 1988
- High-Quality Zinc Sulfide Thin Films Grown by MOCVD Using Carbon Disulfide as A Sulfur SourceJapanese Journal of Applied Physics, 1988
- The preparation of ZnS:Mn electroluminescent layers by MOCVD using new manganese sourcesJournal of Crystal Growth, 1988
- Growth of hexagonal ZnS thin films by MOCVD using CS2 gas as a sulfur sourceJournal of Crystal Growth, 1988
- ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- AC-Thin Film ZnS:Mn Electroluminescent Device Prepared by Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- ZnSe:Mn DC-Electroluminescent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVDJapanese Journal of Applied Physics, 1985
- Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour depositionJournal of Crystal Growth, 1982
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982