Pulsed 1-watt heterojunction bipolar transistors at 35 GHz
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (5) , 145-147
- https://doi.org/10.1109/75.217209
Abstract
High-peak-power pulsed operation of common emitter AlGaAs-GaAs HBTs, at 35 GHz is reported. A 1.0-W peak power with 2.3-dB associated gain and power-added efficiency of 28% is obtained. Small devices gave up to 43% power-added efficiency with 190-mW output at 4.8-dB gain. The pulse length was 300 ns, and the duty cycle was 33%. The device design, small-signal characteristics, and power results obtained are described.Keywords
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