Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers
- 1 March 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (2) , 273-287
- https://doi.org/10.1007/bf02654672
Abstract
No abstract availableKeywords
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