Low-Temperature Vacuum Deposition of Homoepitaxial Silicon
- 1 October 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (11) , 4537-4538
- https://doi.org/10.1063/1.1709165
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICONApplied Physics Letters, 1966
- Selected Area Deposition of Single Crystal Silicon on Amorphous QuartzJournal of the Electrochemical Society, 1966
- Formation Conditions and Structure of Ge Films Deposited on Polished (111) CaF2 Substrates in an Ultrahigh-Vacuum SystemJournal of Applied Physics, 1965
- EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUMApplied Physics Letters, 1964
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Dislocation Content in Epitaxially Vapor-Grown Ge Crystals [Letter to the Editor]IBM Journal of Research and Development, 1960