Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxy
- 1 October 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 92 (1-2) , 83-87
- https://doi.org/10.1016/0022-0248(88)90437-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xasJournal of Electronic Materials, 1987
- Capacitance transient analysis of molecular-beam epitaxial n-In0.53Ga0.47As and n-In0.52Al0.48 AsJournal of Vacuum Science & Technology B, 1987
- Dynamical x-ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix methodJournal of Applied Physics, 1986
- The growth of high mobility InGaAs and InAlAs layers by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Electrical characterization of Fe-doped semi-insulating InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Minority carrier injection and charge storage in epitaxial Schottky barrier diodesSolid-State Electronics, 1965
- Space-Charge Limited Emission in SemiconductorsPhysical Review B, 1953