Direct growth of GaN on (0 0 0 1) 6H–SiC by low-pressure MOVPE with a flow channel
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 189-192
- https://doi.org/10.1016/s0022-0248(98)00201-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Private School Promotion Foundation (07650402)
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- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969