Crystalline Qualities and Critical Current Densities of As-Grown Ba2YCu3Ox Thin Films on Silicon with Buffer Layers
- 1 June 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (6A) , L955
- https://doi.org/10.1143/jjap.29.l955
Abstract
As-grown Ba2YCu3O x thin films (\lesssim100 nm) have been prepared by rf magnetron sputtering deposited on Si(100) with buffer layers of YSZ and Y2O3/YSZ. Epitaxial growth of Ba2YCu3O x thin films is confirmed by ion channeling measurements along the (100) directions of the Si substrate showing a χmin of 60% on YSZ/Si, and 6% on Y2O3/YSZ/Si using 2.0 MeV He+. The as-grown films have critical current densities of 104 A/cm2 on YSZ/Si and 106 A/cm2 on Y2O3/YSZ/Si at 77 K. Our results indicate that the superconducting properties of the films are limited primarily by the value of lattice mismatch between the Ba2YCu3O x and buffer layers.Keywords
This publication has 6 references indexed in Scilit:
- Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin filmsApplied Physics Letters, 1990
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989
- Evaluation of crystalline quality of heteroepitaxial yttria-stabilized zirconia films on silicon by means of ion beam channelingJournal of Applied Physics, 1989
- As-Grown Preparation of Superconducting Epitaxial Ba2YCu3Ox Thin Films Sputtered on Epitaxially Grown ZrO2/Si(100)Japanese Journal of Applied Physics, 1989
- High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layersApplied Physics Letters, 1989
- Ion-channeling study of single-crystal YBa_{2}Cu_{3}O_{x}Physical Review B, 1988