Evaluation of crystalline quality of heteroepitaxial yttria-stabilized zirconia films on silicon by means of ion beam channeling

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Abstract
Yttria-stabilized zirconia (YSZ) films have been deposited by vacuum evaporation on Si(100) substrates heated at 800 °C. Rutherford backscattering spectra of the YSZ films show that they are epitaxially grown on the Si(100) substrate, which is consistent with x-ray diffraction and reflection high-energy electron diffraction observations. The spread of crystallite orientation in the epitaxial film is estimated to be 0.22°, by analyzing the angular dependence of the total backscattering yield. The dominant defect is suggested to be a stacking fault by dechanneling ion energy dependence measurements and 30% of the oxygen atoms are displaced from the oxygen sublattice site.