GaAs/Ge3N4/Al structures and mis field-effect transistors based on them

This publication has 8 references indexed in Scilit:

• Microwave field-effect transistors from sulphur-implanted GaAs
  Solid-State Electronics, 1977
• GaAs f.e.t.s with silicon-implanted channels
  Electronics Letters, 1977
• Enhancement-mode GaAs m.o.s.f.e.t. on semi-insulating substrate using a self-aligned gate technique
  Electronics Letters, 1977
• Depletion-mode GaAs MOS FET
  Applied Physics Letters, 1976
• MIS structure GaAs–Ge3N4–Al
  Physica Status Solidi (a), 1976
• GaAs microwave power FET
  IEEE Transactions on Electron Devices, 1976
• Performance of sulphur-ion-implanted GaAs f.e.t.s
  Electronics Letters, 1976
• The GaAs inversion-type MIS transistors
  Solid-State Electronics, 1974