The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy
- 31 July 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 131 (1-2) , 1-4
- https://doi.org/10.1016/0022-0248(93)90389-e
Abstract
No abstract availableKeywords
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