Vertical scaling of the polysilicon emitter/implanted base structure
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Grain‐Growth Mechanisms in PolysiliconJournal of the Electrochemical Society, 1982
- Diffusion of arsenic in polycrystalline siliconApplied Physics Letters, 1982
- Effect of emitter contact on current gain of silicon bipolar devicesIEEE Transactions on Electron Devices, 1980
- Heavy doping effects in p-n-p bipolar transistorsIEEE Transactions on Electron Devices, 1980