Photoluminescence in electrically reversible (semiconducting to semi-insulating) bulk GaAs
- 1 October 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (7) , 2960-2964
- https://doi.org/10.1063/1.339381
Abstract
A photoluminescence study has been made of electrically reversible, bulk, liquid‐encapsulated Czochralski GaAs at temperatures 2–300 K. The reversibility from the semiconducting to the semi‐insulating state is made by slow or fast cooling, respectively, following a 5‐h, 950 °C heat treatment in an evacuated quartz ampoule. A donor level at Ec−0.13 eV and two acceptor levels at Ev+0.069 eV and Ev+0.174 eV are produced after the heat treatment. Only the acceptor levels were detected by photoluminescence. A tentative model assigning the acceptor to the intrinsic defect pair VGa‐GaAs is discussed.This publication has 21 references indexed in Scilit:
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