Calculation of intrinsic transport parameters of a double-diffused transistor
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 399-405
- https://doi.org/10.1016/0038-1101(69)90096-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of a physical model for double diffused transistorsSolid-State Electronics, 1968
- Minority carrier injection characteristics of the diffused emitter junctionIRE Transactions on Electron Devices, 1962
- Base Region Transport Characteristics of a Diffused TransistorJournal of Applied Physics, 1962
- Depletion Layer Properties in Double Diffused Transistors†Journal of Electronics and Control, 1961