A suggested mechanism for silicon direct bonding from studying hydrophilic and hydrophobic surfaces
- 1 September 1992
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 2 (3) , 158-160
- https://doi.org/10.1088/0960-1317/2/3/006
Abstract
Silicon direct bonding (SDB) between both hydrophilic and hydrophobic surfaces was studied by measuring the surface energies. Without annealing, roughly the same energies were measured for both types of surfaces. The strongest bonds were achieved for hydrophobic surfaces, annealed at 600 degrees C and above. The established mechanism for SDB, where OH groups are held responsible for the initial attraction force, cannot explain bonding between hydrophobic surfaces where almost no OH groups are present. By calculating the surface energy/mole, and comparing this to data for hydrogen bonds and van der Waals forces, a novel mechanism for SDB is proposed where the initial attraction is due to van der Waals forces.Keywords
This publication has 11 references indexed in Scilit:
- Silicon‐On‐Insulator by Wafer Bonding: A ReviewJournal of the Electrochemical Society, 1991
- Wafer bonding: Investigation and in situ observation of the bond processSensors and Actuators A: Physical, 1990
- Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfacesApplied Physics Letters, 1990
- Interface charge control of directly bonded silicon structuresJournal of Applied Physics, 1989
- XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) SurfacesJournal of the Electrochemical Society, 1989
- ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDINGLe Journal de Physique Colloques, 1988
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Silicon microcavities fabricated with a new techniqueElectronics Letters, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986