Oxygen-Enhanced 1.54µm Photoluminescence of Er+3 In Silicon
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Recombination processes in erbium-doped MBE siliconSemiconductor Science and Technology, 1993
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- Optical Activation of Er3+ Implanted in Silicon by Oxygen ImpuritiesJapanese Journal of Applied Physics, 1990
- Will Er 3+ Become As Useful As Nd 3+ In New Solid State Laser Materials?Published by SPIE-Intl Soc Optical Eng ,1989
- Interaction of Be and O in GaAsApplied Physics Letters, 1989
- Donor centers in irradiated Si doped with rare-earth elementsPhysica Status Solidi (a), 1985