Charge separation in coupled InAs quantum dots and strain-induced quantum dots
- 6 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (15) , 2194-2196
- https://doi.org/10.1063/1.123798
Abstract
We present an InAs self-assembled quantum dot structure designed to spatially separate and store photo-generated electron-hole pairs. The structure consists of pairs of strain-coupled quantum dots. Separation of electron-hole pairs into the quantum dots and strain-induced quantum dots has been observed using power-dependant photoluminescence and bias-dependent photoluminescence.Keywords
This publication has 15 references indexed in Scilit:
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Electrical detection of optically induced charge storage in self-assembled InAs quantum dotsApplied Physics Letters, 1998
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasersApplied Physics Letters, 1998
- Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detectorApplied Physics Letters, 1998
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laserJournal of Applied Physics, 1998
- Demonstration of a six-dot quantum cellular automata systemApplied Physics Letters, 1998
- The quantum dot spectrometerApplied Physics Letters, 1997
- A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channelApplied Physics Letters, 1997
- Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structuresApplied Physics Letters, 1997