Computer simulation of growth of thick layers from solutions of finite solute concentration without convection
- 1 February 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (3) , 690-698
- https://doi.org/10.1016/0022-0248(82)90054-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Expansions in time for the solution of one-dimensional stefan problems of crystal growthInternational Journal of Heat and Mass Transfer, 1980
- Diffusion about a growing cubeJournal of Crystal Growth, 1977
- Diffusion theory for crystal growth at arbitrary solute concentrationThe Journal of Chemical Physics, 1975
- Interface kinetics and crystal growth under conditions of constant cooling rateJournal of Crystal Growth, 1973
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- An exact calculation of crystal growth rates under conditions of constant cooling rateJournal of Crystal Growth, 1973
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969
- On the growth rate of crystals from solutionJournal of Crystal Growth, 1968