Gap state distribution of amorphous hydrogenated Si and Si:Ge alloys
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 545-548
- https://doi.org/10.1016/0022-3093(83)90641-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurementsPhysical Review B, 1983
- Transient photoconductivity and photo-induced optical absorption in amorphous semiconductorsPhilosophical Magazine Part B, 1982
- Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Light-induced aging effects in Schottky diodes on sputtered hydrogenated amorphous silicon (a-SiH) : interpretation of the photovoltaic stabilityJournal of Non-Crystalline Solids, 1980