The effects of substrate and annealing ambient on the electrical properties of Ta2O5 thin films prepared by plasma enhanced chemical vapor deposition
- 1 December 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 253 (1-2) , 435-439
- https://doi.org/10.1016/0040-6090(94)90362-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Tantalum Oxide Thin Films for Dielectric Applications by Low‐Pressure Chemical Vapor Deposition: Physical and Electrical PropertiesJournal of the Electrochemical Society, 1993
- Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1993
- Ellipsometric Examination of Growth and Dissolution Rates of Ta2 O 5 Films Formed by Metalorganic Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Effects of annealing conditions on the properties of tantalum oxide films on silicon substratesJournal of Electronic Materials, 1992
- The effect of substrate temperature on the composition and growth of tantalum oxide thin films deposited by plasma-enhanced chemical vapour depositionThin Solid Films, 1991
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layerJournal of Applied Physics, 1989
- Ultra-thin Ta2O5dielectric film for high-speed bipolar memoriesIEEE Transactions on Electron Devices, 1987
- Alpha-particle-induced soft errors in dynamic memoriesIEEE Transactions on Electron Devices, 1979
- Selected Properties of Pyrolytic Ta[sub 2]O[sub 5] FilmsJournal of the Electrochemical Society, 1973