Ambipolar transport in amorphous semiconductors in the relaxation regime
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 619-622
- https://doi.org/10.1016/0022-3093(87)90145-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Minority-carrier injection into relaxation semiconductorsJournal of Applied Physics, 1986
- Steady-state photocarrier grating technique for diffusion length measurement in photoconductive insulatorsApplied Physics Letters, 1986
- Conduction in the relaxation regimePhysical Review B, 1975
- Transport in Relaxation SemiconductorsPhysical Review Letters, 1973
- Principles of electrical behavior of amorphous semiconductor alloysJournal of Non-Crystalline Solids, 1973
- Transport in Relaxation SemiconductorsPhysical Review B, 1972