Near-field photolithography with a solid immersion lens
- 25 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 501-503
- https://doi.org/10.1063/1.123168
Abstract
We have exposed 190 nm lines in photoresist by focusing a laser beam (λ=442 nm) in a solid immersion lens (SIL) that is mounted on a flexible cantilever and scanned by a modified commercial atomic force microscope. The scan rate was 1 cm/s, which is several orders of magnitude faster than typical reports of near-field lithography using tapered optical fibers. The enhanced speed is a result of the high optical efficiency (about 10−1) of the SIL. Once exposed with the SIL, the photoresist was developed and the pattern was transferred to the silicon substrate by plasma etching.This publication has 15 references indexed in Scilit:
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