Vibrational excitations in a-Si3N4:H(D) alloys

Abstract
The authors report here the first results of a theoretical study of the vibrational excitations in the amorphous Si3N4 and a-Si3N4:H(D) alloys using a cluster Bethe lattice method. The a-Si3N4 network has a nearest-neighbour tetrahedral coordination of N atoms around the Si atom and a threefold planar coordination of Si atoms around the N atom. The computed phonon density of states for a-Si3N4 and a-Si3N4:H alloys is in very good agreement with the available infrared and Raman data. The study shows the occurrence of the mono- and dihydrides both at the Si and N atoms. Detailed infrared and Raman measurements need to be performed on the a-Si3N4:H alloys for the different concentrations of H atoms, especially in the low-frequency region, to elucidate the microscopic structure of the alloys.

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