LEELS study of the formation of the AG-semiconductor (Si. Ge.A3B5) interface at 10K
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 52, 113-119
- https://doi.org/10.1016/0368-2048(90)85009-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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