Influence of background doping and implant damage on the diffusion of implanted silicon in GaAs
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 472-474
- https://doi.org/10.1063/1.102769
Abstract
Diffusion of Si in GaAs is studied using implanted Si in undoped GaAs, implanted Si in Se-, Si-, and Zn-doped GaAs, and grown-in Si in epitaxial layer structures. No diffusion is observed in the undoped and Zn-doped GaAs cases, a moderate level is observed in the Si-doped case, and a significant amount is found for the Se-doped and nonimplanted Si-doped epitaxy cases. These results indicate that the diffusion is controlled by a Fermi level mechanism (probably via ionized gallium vacancies) and that implant damage inhibits diffusion by keeping the electron concentration and/or the ionized gallium vacancy concentration low.Keywords
This publication has 11 references indexed in Scilit:
- A model of Si diffusion in GaAs based on the effect of the Fermi levelJournal of Applied Physics, 1989
- Impurity diffusion enhancement of interdiffusion in an InGaPAs-GaAs heterostructureJournal of Applied Physics, 1989
- Mixing inhibition and crystalline defects in heavily Si-doped AlAs/GaAs superlatticesApplied Physics Letters, 1988
- Diffusion mechanisms and superlattice disordering in GaAsMaterials Science and Engineering: B, 1988
- Sensitivity of Si diffusion in GaAs to column IV and VI donor speciesApplied Physics Letters, 1988
- Tem Study of the Annealing Behavior of Secondary Defects in L MeV Si Implanted GaasMRS Proceedings, 1988
- Background doping dependence of silicon diffusion in p-type GaAsApplied Physics Letters, 1987
- Diffusion and electrical properties of silicon-doped gallium arsenideJournal of Applied Physics, 1985
- Saturation of Si activation at high doping levels in GaAsJournal of Physics and Chemistry of Solids, 1983
- The diffusion of silicon in gallium arsenideSolid-State Electronics, 1965