Sensitivity of Si diffusion in GaAs to column IV and VI donor species
- 11 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2) , 129-131
- https://doi.org/10.1063/1.99072
Abstract
Secondary ion mass spectroscopy and carrier concentration measurements are used to characterize Si diffusion into GaAs wafers containing two fundamentally different forms of donors, the column IV donors Si or Sn and the column VI donors Se or Te. A decrease in the Si diffusion rate is found in GaAs containing the column VI donors compared to the column IV donors. This trend is consistent with the model in which the Si diffuses as donor-gallium-vacancy complexes. The decrease in the Si diffusion coefficient is attributed to the greater binding energy of column VI donor-gallium-vacancy nearest-neighbor complexes, thus reducing the concentration of free-gallium vacancies available to complex with the Si.Keywords
This publication has 15 references indexed in Scilit:
- Background doping dependence of silicon diffusion in p-type GaAsApplied Physics Letters, 1987
- Coupled stripe AlxGa1−xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disorderingApplied Physics Letters, 1987
- Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasersJournal of Applied Physics, 1985
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Donor-induced disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum-well lasersJournal of Applied Physics, 1985
- Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusionApplied Physics Letters, 1984
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- The diffusion of silicon in gallium arsenideSolid-State Electronics, 1965
- The effect of arsenic pressure on impurity diffusion in gallium arsenideJournal of Physics and Chemistry of Solids, 1961
- Solubility of Flaws in Heavily-Doped SemiconductorsPhysical Review B, 1960