Effect of heating on the structure of Au/GaAs encapsulated with SiO2
- 31 December 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (12) , 1259-1266
- https://doi.org/10.1016/0038-1101(87)90049-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Passivation of ohmic contacts to GaAsIEEE Electron Device Letters, 1985
- Gold on GaAs: Its crystallographic orientation and control on the orientation of the Au-Ga reaction productThin Solid Films, 1985
- Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regimeSolid-State Electronics, 1984
- Physiochemical Effects of Heating Gold Thin Films on Gallium ArsenideJournal of the Electrochemical Society, 1983