Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime
- 31 October 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (10) , 921-924
- https://doi.org/10.1016/0038-1101(84)90013-3
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- An Infrared Absorption Study of LTCVD Silicon DioxideJournal of the Electrochemical Society, 1983
- The effect of interfacial traps on the stability of insulated gate devices on InPJournal of Applied Physics, 1983
- On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface statesThin Solid Films, 1983
- Indirect plasma deposition of silicon dioxideJournal of Vacuum Science and Technology, 1982
- InP metal/oxide/semiconductor devices incorporating Al2O3 dielectrics chemically vapour deposited at low pressureThin Solid Films, 1982
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Films from the Low Temperature Oxidation of SilaneJournal of the Electrochemical Society, 1979
- Carrier generation and trapping in n-InP/SiO2 capacitorsJournal of Vacuum Science and Technology, 1979
- InP–SiO 2 m.i.s. structure with reduced interface state density near conduction bandElectronics Letters, 1978
- Growth of silica and phosphosilicate filmsJournal of Applied Physics, 1973