Two pseudobinary semiconducting silicides: RexMo1−xSi2and CrxV1−xSi2
- 23 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1655-1657
- https://doi.org/10.1063/1.103132
Abstract
Two groups of thin‐film samples were grown on silicon wafer substrates of compositions spanning the entire range of the ternary disilicides: RexMo1−xSi2 and CrxV1−xSi2. In each case, the lattice parameters vary smoothly with composition. The optical and electrical properties of the films suggest that when molybdenum is added to semiconducting ReSi2 and when vanadium is added to semiconducting CrSi2, the forbidden energy gap in each case decreases smoothly to zero.Keywords
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