Optical and electrical properties of semiconducting rhenium disilicide thin films
- 1 August 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 162, 29-40
- https://doi.org/10.1016/0040-6090(88)90190-3
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- On the feasibility of through-wafer optical interconnects for hybrid wafer-scale-integrated architecturesIEEE Transactions on Electron Devices, 1987
- Recent developments in the strained layer epitaxy of germanium–silicon alloysJournal of Vacuum Science & Technology B, 1986
- Summary Abstract: Semiconducting silicides as potential materials for electro-optic very large scale integrated circuit interconnectsJournal of Vacuum Science & Technology B, 1986
- Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1986
- Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxyJournal of Applied Physics, 1985
- Optical properties of GaAs on (100) Si using molecular beam epitaxyApplied Physics Letters, 1984
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- GaAs MESFET's fabricated on monolithic GaAs/Si substratesIEEE Electron Device Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983