Hydrogen induced donor-type Si/SiO2 interface states
- 7 November 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (19) , 2428-2430
- https://doi.org/10.1063/1.112696
Abstract
Study of donor‐type Si/SiO2 interfaces states shows that these centers anneal at room temperature when neutral but are stable when charged positively. Moreover, the anneal process is accompanied by the release of H. We propose that the donor states are related to H attached to interfacial network sites, most likely O atoms, constituting electrically active complexes. When positively charged, H is strongly bonded; when neutral H is only weakly attached. In the latter case it can escape and dimerize so that the states disappear. Similar complexes tying down H in a positively charged state would constitute small cross‐section hole traps in the bulk of the oxide.Keywords
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