GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

1 July 1990

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 2 (7) , 456-458
https://doi.org/10.1109/68.56622

Abstract

Vertical cavity surface emitting lasers (VCSELs) with GaAs/AlGaAs multiple quantum well (20 wells) graded-index separate-confinement-heterostructure (GRIN-SCH) active regions are discussed. The VCSEL structures, which also contained two Al/sub x/Ga/sub 1-x/As/Al/sub y/Ga/sub 1-y/As distributed Bragg reflectors, were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 mA and 14 kA/cm/sup 2/, respectively, near 0.85- mu m wavelength. Both single-longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

Keywords

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