Ar+–Si Sputtering in Low Temperature and High Vacuum Pressure Ranges
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5R) , 768-769
- https://doi.org/10.1143/jjap.26.768
Abstract
The influence of temperature and pressure on the sputtering yield was examined in a low-temperature range of -100 to 300°C and a high-pressure range of 5×10-5 to 5×10-4 Torr. This work was carried out with an ion-etching system using a Kaufman-type ion source. The results suggest that the temperature and pressure influence the sputtering or applicaltions using sputtering at 1 keV Ar+–Si ion bombardment.Keywords
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