Temperature Dependence of Sputtering Yields of Ge (100) and (110) Surfaces
- 1 June 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7) , 2838-2840
- https://doi.org/10.1063/1.1782133
Abstract
The temperature dependence of sputtering yields of Ge (100) and (110) under low‐energy Ne+ and Ar+ ion bombardment has been investigated. For target temperatures above the annealing temperature Ta where atom ejection patterns are observed, yield differences up to 50% are noted. For target temperatures below Ta the sputtering yield is independent of the crystallographic surface. Furthermore, this yield is less than the high‐temperature yield for the (100) surface and higher than the high‐temperature yield for the (110) surface.This publication has 9 references indexed in Scilit:
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