Selective-area impurity-doped planar edge-coupledwaveguide photodiode (SIMPLE-WGPD) for low-cost, low-power-consumption opticalhybrid modules
- 24 October 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (22) , 2078-2079
- https://doi.org/10.1049/el:19961370
Abstract
The authors propose two novel designs of a waveguide photodiode for access networks; one is a planar waveguide conjunction with impurity diffusion to simplify the fabrication process and the other is an intentionally p-type doped photoabsoption layer to lower the operating voltage. Without degrading the efficiency, the fabricated device has a bandwidth of 500 MHz at 1 V and 250 MHz even at 0 V.Keywords
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