Sputtered atom ejection from Ge and the annealing of ion bombardment induced disorder

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Abstract
It has been previously established that it is necessary to keep single targets of Ge and Si above a certain critical temperature Ta before one can obtain an ejection pattern indicative of surface order. In the following work, we report on the dependence of the disorder to order transition temperature, Ta on the incident ion mass, the dose rate and the crystallography of the target. The disorder to order transition temperature, Ta has been measured for 5, 10 and 15 keV Ar+, K+ and Ne+ bombardment of (111), (110) and (100) Ge, using the sputtered atom ejection pattern to indicate the restitution of order. The dose rate dependence of the transition temperature, Ta , was used to calculate activation energies for the transition occurring.