High speed AlGaAs/GaAs HBT circuits for up to 40 Gb/s optical communication
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 211-214
- https://doi.org/10.1109/gaas.1997.628271
Abstract
High speed circuits such as multiplexer/demultiplexers, variable-gain limiting amplifiers (VGAs), and transimpedance amplifiers operating at high bit rates (>30 Gb/s) are required for the realization of high performance lightwave systems using TDM or WDM. We have demonstrated 40 Gb/s multiplexers, 30 Gb/s data and clock regeneration, DC-26 GHz VGAs, and transimpedance amplifiers with 3 dB bandwidth in excess of 20 GHz for use in such systems using a manufacturable hybrid digital/microwave HBT process.Keywords
This publication has 10 references indexed in Scilit:
- A packaged broadband monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave packages for 30 Gbit/s analog and digital circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 30 Gbit/s 1:4 demultiplexer IC using AlGaAs/GaAsHBTsElectronics Letters, 1997
- Packaged 30 Gbit/s data demultiplexing and clockextraction IC fabricated in a AlGaAs/GaAs HBT technologyElectronics Letters, 1996
- 40 Gbit/s AlGaAs/GaAs HBT 4:1 multiplexer ICElectronics Letters, 1995
- Multi-Gb/s silicon bipolar clock recovery ICIEEE Journal on Selected Areas in Communications, 1991
- High performance hybrid circuit modules for lightwave systems operating at data rates of 10 Gbit/s and higherElectronics Letters, 1991
- 9 GHz bandwidth, 8–20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technologyElectronics Letters, 1989
- 18-GHz 1/8 dynamic frequency divider using Si bipolar technologiesIEEE Journal of Solid-State Circuits, 1989
- The design of wide-band transistor feedback amplifiersProceedings of the Institution of Electrical Engineers, 1963