Vapor phase epitaxy of GaN usingGaCl3N2 andNH3N2
Open Access
- 1 December 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 169 (4) , 689-696
- https://doi.org/10.1016/s0022-0248(96)00472-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Heteroepitaxy of gallium nitride on (0001), (012) and (100) sapphire surfacesJournal of Crystal Growth, 1994
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1994
- Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3 and AsH3 SystemJapanese Journal of Applied Physics, 1988
- Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl3 with AsH3/H2Japanese Journal of Applied Physics, 1988
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973
- Preparation of Mg-doped GaN diodes exhibiting violet electroluminescenceMaterials Research Bulletin, 1972
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substratesJournal of Crystal Growth, 1971
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- Epitaxial Synthesis of GaAs Using a Flow SystemJournal of the Electrochemical Society, 1966